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AMXcompounds with the ZrBeSi structure tolerate a vacancy concentration of up to 50 % on theM‐site in the planarMX‐layers. Here, we investigate the impact of vacancies on the thermal and electronic properties across the full EuCu_1−xZn_0.5xSb solid solution. The transition from a fully‐occupied honeycomb layer (EuCuSb) to one with a quarter of the atoms missing (EuZn_0.5Sb) leads to non‐linear bond expansion in the honeycomb layer, increasing atomic displacement parameters on theMand Sb‐sites, and significant lattice softening. This, combined with a rapid increase in point defect scattering, causes the lattice thermal conductivity to decrease from 3 to 0.5 W mK⁻¹at 300 K. The effect of vacancies on the electronic properties is more nuanced; we see a small increase in effective mass, large increase in band gap, and decrease in carrier concentration. Ultimately, the maximumzTincreases from 0.09 to 0.7 as we go from EuCuSb to EuZn_0.5Sb.

 

AMXcompounds with the ZrBeSi structure tolerate a vacancy concentration of up to 50 % on theM‐site in the planarMX‐layers. Here, we investigate the impact of vacancies on the thermal and electronic properties across the full EuCu_1−xZn_0.5xSb solid solution. The transition from a fully‐occupied honeycomb layer (EuCuSb) to one with a quarter of the atoms missing (EuZn_0.5Sb) leads to non‐linear bond expansion in the honeycomb layer, increasing atomic displacement parameters on theMand Sb‐sites, and significant lattice softening. This, combined with a rapid increase in point defect scattering, causes the lattice thermal conductivity to decrease from 3 to 0.5 W mK⁻¹at 300 K. The effect of vacancies on the electronic properties is more nuanced; we see a small increase in effective mass, large increase in band gap, and decrease in carrier concentration. Ultimately, the maximumzTincreases from 0.09 to 0.7 as we go from EuCuSb to EuZn_0.5Sb.

 

Accurate density functional theory calculations of the interrelated properties of thermoelectric materials entail high computational cost, especially as crystal structures increase in complexity and size. New methods involving ab initio scattering and transport (AMSET) and compressive sensing lattice dynamics are used to compute the transport properties of quaternary CaAl 2 Si 2 -type rare-earth phosphides RECuZnP 2 (RE = Pr, Nd, Er), which were identified to be promising thermoelectrics from high-throughput screening of 20 000 disordered compounds. Experimental measurements of the transport properties agree well with the computed values. Compounds with stiff bulk moduli (>80 GPa) and high speeds of sound (>3500 m s −1 ) such as RECuZnP 2 are typically dismissed as thermoelectric materials because they are expected to exhibit high lattice thermal conductivity. However, RECuZnP 2 exhibits not only low electrical resistivity, but also low lattice thermal conductivity (∼1 W m −1 K −1 ). Contrary to prior assumptions, polar-optical phonon scattering was revealed by AMSET to be the primary mechanism limiting the electronic mobility of these compounds, raising questions about existing assumptions of scattering mechanisms in this class of thermoelectric materials. The resulting thermoelectric performance ( zT of 0.5 for ErCuZnP 2 at 800 K) is among the best observed in phosphides and can likely be improved with further optimization. 

The Zintl compound Eu 2 ZnSb 2 was recently shown to have a promising thermoelectric figure of merit, zT ∼ 1 at 823 K, due to its low lattice thermal conductivity and high electronic mobility. In the current study, we show that further increases to the electronic mobility and simultaneous reductions to the lattice thermal conductivity can be achieved by isovalent alloying with Bi on the Sb site in the Eu 2 ZnSb 2−x Bi x series ( x = 0, 0.25, 1, 2). Upon alloying with Bi, the effective mass decreases and the mobility linearly increases, showing no signs of reduction due to alloy scattering. Analysis of the pair distribution functions obtained from synchrotron X-ray diffraction revealed significant local structural distortions caused by the half-occupied Zn site in this structure type. It is all the more surprising, therefore, to find that Eu 2 ZnBi 2 possesses high electronic mobility (∼100 cm 2 V −1 s −1 ) comparable to that of AM 2 X 2 Zintl compounds. The enormous degree of disorder in this series gives rise to exceptionally low lattice thermal conductivity, which is further reduced by Bi substitution due to the decreased speed of sound. Increasing the Bi content was also found to decrease the band gap while increasing the carrier concentration by two orders of magnitude. Applying a single parabolic band model suggests that Bi-rich compositions of Eu 2 ZnSb 2−x Bi x have the potential for significantly improved zT ; however, further optimization is necessary through reduction of the carrier concentration to realize high zT . 

Compounds that crystallize in the layered CaAl 2 Si 2 structural pattern have rapidly emerged as an exciting class of thermoelectric materials with attractive n- and p-type properties. More than 100 AM 2 X 2 compounds that form this structure type – characterized by anionic M 2 X 2 slabs sandwiched between layers of octahedrally coordinated A cations – provide numerous potential paths to chemically tune every aspect of thermoelectric transport. This review highlights the chemical diversity of this structure type, discusses the rules governing its formation and stability relative to competing AM 2 X 2 structures ( e.g. , ThCr 2 Si 2 and BaCu 2 S 2 ), and attempts to bring some of the most recently discovered compounds into the spotlight. The discussion of thermoelectric transport properties in AM 2 X 2 compounds focuses primarily on the intrinsic parameters that determine the potential for a high figure of merit: the band gap, effective mass, degeneracy, carrier relaxation time, and lattice thermal conductivity. We also discuss routes that have been used to successfully control the carrier concentration, including controlling the cation vacancy concentration, doping, and isoelectronic alloying (approaches that are highly interdependent). Finally, we discuss recent progress made towards n-type doping in this system, highlight opportunities for further improvements, as well as open questions that still remain.